Samsung Collaborates with ASML to Develop High NA EUV Lithography Technology

Samsung Electronics will collaborate with ASML to develop High Numerical Aperture (High-NA) Extreme Ultraviolet (EUV) lithography technology, planning to apply High NA EUV equipment in DRAM production starting in 2028, and expand it to 1.4-nanometer advanced logic processes. This partnership aims to transition from the 6-inch photomask templates used since the 1980s to 12-inch versions, driving a shift in industry standards. The numerical aperture of High NA EUV is 66% higher than that of traditional EUV, enabling the formation of finer circuit patterns. The replacement of photomasks will enhance wafer production efficiency and reduce chip manufacturing costs.

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